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Part: DF45208
Category:
Discrete
-> Diodes & Rectifiers
-> General Purpose Diodes
Description: 800V Fast Recovery Diode
Company: Dynex Semiconductor
Datasheet: Download DF45208 datasheet File size : 85 kB
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Datasheet text preview:
DF452
DF452
Fast Recovery Diode
Replaces March 1998 version, DS4213-3.2 DS4213-4.0 January 2000
APPLICATIONS
s Induction Heating s A.C. Motor Drives s Inverters And Choppers s Welding s High Frequency Rectification s UPS
KEY PARAMETERS VRRM 1600V I F(AV) 540A I FSM 5000A Qr 35µC trr 3.2µs
FEATURES
s Double side cooling s High surge capability s Low recovery charge
VOLTAGE RATINGS
Type Number Repetitive Peak Reverse Voltage VRRM V 1600 1400 1200 1000 800 600 Conditions
DF452 16 DF452 14 DF452 12 DF452 10 DF452 08 DF452 06
VRSM = VRRM + 100V
Outline type code: M771. See Package Details for further information.
CURRENT RATINGS
Symbol Double Side Cooled IF(AV) I F(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC 540 628 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) I F(AV) I F(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC A A A 1/7
DF452
SURGE RATINGS
Symbol I FSM I2t I FSM I2t Parameter Surge (non-repetitive) forward current 10ms half sine; with 0% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 150oC I2t for fusing A2s 125 x 103 A2s kA Conditions Max. 5.0 Units kA
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 5.0kN with mounting compound Forward (conducting) Double side Single side -55 4.5 0.147 0.02 0.04 150 150 5.5
o
Min. dc Anode dc -
Max. 0.07 0.133
Units
o
C/W
o
C/W C/W C/W C/W
o
o
Rth(c-h)
Thermal resistance - case to heatsink
o
Tvj T stg -
Virtual junction temperature Storage temperature range Clamping force
C C
o
kN
CHARACTERISTICS
Symbol VFM IRRM trr QRA1 I RM K VTO rT VFRM Forward voltage Peak reverse current Reverse recovery time Recovered charge (50% chord) Reverse recovery current Soft factor Threshold voltage Slope resistance Forward recovery voltage At Tvj = 150oC At Tvj = 150oC di/dt = 1000A/µs, Tj = 125oC IF = 200A, diRR/dt = 20A/µs Tcase = 125oC, VR = 100V Parameter Conditions At 750A peak, Tcase = 25oC At VRRM, Tcase = 150oC Typ. 3.2 1.8 Max. 1.6 40 35 43 1.0 0.8 Units V mA
µs
µC A V m V
2/7
DF452
DEFINITION OF K FACTOR AND QRA1
QRA1 = 0.5x IRR(t1 + t2) dIR/dt 0.5x IRR IRR t1 t2 k = t1/t2
CURVES
3000 Measured under pulse conditions
2500
Instantaneous forward current IF - (A)
2000
Tj = 150°C 1500
Tj = 25°C 1000
500 1.0
1.5
2.0
2.5
3.0
Instantaneous forward voltage VF - (V)
Fig.1 Maximum (limit) forward characteristics
3/7
DF452
500 Measured under pulse conditions
400
Instantaneous forward current IF - (A)
300 Tj = 150°C
200
Tj = 25°C
100
0 0.95
1.05
1.15
1.25
1.35
1.45
Instantaneous forward voltage VF - (V)
Fig.2 Maximum (limit) forward characteristics
10000 IF QS =
50µs 0
Conditions: Tj = 125°C, QS VR = 100V
Reverse recovered charge QS - (µC)
1000
tp = 1ms dIR/dt IRR IF = 2000A IF = 1000A IF = 500A IF = 200A IF = 100A
100
10
1
10 100 Rate of rise of reverse current dIR/dt - (A/µs)
Fig.4 Recovered charge
1000
4/7
DF452
1000 Conditions: Tj = 125°C, VR = 100V IF = 2000A
Reverse recovery current IRR - (A)
IF = 1000A IF = 500A IF = 200A 100 IF = 100A
10
1
10 100 Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig.5 Typical reverse recovery current vs rate of fall of forward current
0.1 d.c. Double side cooled
Thermal impedance - (°C/W)
0.01
0.001 0.01
0.1
1 Time - (s)
10
100
Fig.6 Maximum (limit) transient thermal impedance - junction to case - (°C/W)
5/7
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