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Part: DF451

Category:
 Discrete
   -> Diodes & Rectifiers
     -> Fast Recovery Diodes

Description: 295a 1600v Disc Fast Recovery Diode

Company: Dynex Semiconductor

Datasheet: Download DF451 datasheet     File size : 85 kB

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Datasheet text preview:
DF451

DF451
Fast Recovery Diode
Replaces March 1999 version, DS4142-4.0 DS4143-5.0 January 2000

FEATURES
s s s

Double Side Cooling High Surge Capability Low Recovery Charge

Applications
s s s s s s

KEY PARAMETERS VRRM 1600V I F(AV) 295A I FSM 3500A Qr 25µC trr 1.22µs

Induction Heating A.C. Motor Drives Inverters And Choppers Welding High Frequency Rectification UPS

Voltage Ratings
Type Number Repetitive Peak Reverse Voltage VRRM V 1600 1400 1200 1000 800 600 Conditions Outline type code: M771. See Package Details for further information. VRSM = VRRM + 100V

DF451 16 DF451 14 DF451 12 DF451 10 DF451 08 DF451 06

CURRENT RATINGS
Symbol Double Side Cooled IF(AV) I F(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC 295 543 391 A A A Parameter Conditions Max. Units

Single Side Cooled (Anode side) I F(AV) I F(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC 220 348 285 A A A 1/87

DF451
SURGE RATINGS
Symbol I FSM I2t I FSM I2t Parameter Surge (non-repetitive) forward current 10ms half sine; with 0% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 150oC I2t for fusing 39.2 x 103 A2s 61.25 x 103 2.8 A2s kA Conditions Max. 3.5 Units kA

THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Max. 0.07 0.133 0.147 0.02 0.02 150 150 5.5 Units
o

dc Anode dc Cathode dc

­55 4.5

C/W

o

C/W C/W C/W C/W
o

o

Rth(c-h)

Thermal resistance - case to heatsink

Clamping force 5.0kN with mounting compound Forward (conducting)

Double side Single side

o

o

Tvj T stg -

Virtual junction temperature Storage temperature range Clamping force

C C

o

kN

CHARACTERISTICS
Symbol VFM IRRM trr QRA1 I RM K VTO rT VFRM Forward voltage Peak reverse current Reverse recovery time Recovered charge (50% chord) Reverse recovery current Soft factor Threshold voltage Slope resistance Forward recovery voltage At Tvj = 125oC At Tvj = 125oC di/dt = 1000A/µs, Tj = 125oC IF = 500A, diRR/dt = -80A/µs Tcase = 125oC, VR = 100V Parameter Conditions At 600A peak, Tcase = 25oC At VRRM, Tcase = 125oC Typ. 1.22 1.7 Max. 2.65 100 Units V mA µs µC A V m V

25 40 1.6 1.5 40

2/7

DF451
DEFINITION OF K FACTOR AND QRA1
QRA1 = 0.5x IRR(t1 + t2) dIR/dt 0.5x IRR IRR t1 t2 k = t1/t2

CURVES
3000 Measured under pulse conditions

2500
Instantaneous forward current, IF - (A)

2000

Tj = 150°C 1500

Tj = 25°C 1000

500 2.0

3.0

4.0

5.0

6.0

Instantaneous forward voltage, VF - (V)

Fig.1 Maximum (limit) forward characteristics

3/87

DF451

500 Measured under pulse conditions

400
Instantaneous forward current, IF - (A)

300 Tj = 150°C

200 Tj = 25°C

100

0 1.25

1.5

1.75

2.0

2.25

Instantaneous forward voltage, VF - (V)

Fig.2 Maximum (limit) forward characteristics

4/7

DF451

1000 IF QS =

50µs 0

Conditions: Tj = 125°C, VR = 100V

QS tp = 1ms dIR/dt 100 IRR IF = 2000A IF = 1000A IF = 500A IF = 200A IF = 100A

Reverse recovered charge QS - (µC)

10

1 1 10 100 Rate of rise of reverse current, dIR/dt - (A/µs) 1000

Fig.3 Recovered charge
1000 Conditions: Tj = 125°C, VR = 100V

IF = 2000A

Reverse recovery current, IRR - (A)

IF = 1000A 100 IF = 500A

IF = 100A

10

1 1 10 100 Rate of rise of reverse current, dIR/dt - (A/µs) 1000

Fig.4 Typical reverse recovery current vs rate of rise of forward current 5/87




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