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Part: DCR504ST10
Category:
Discrete
-> Thyristors
-> PCT (Phase Control Thyristors)
Description: 1000V Phase Control Thyristor
Company: Dynex Semiconductor
Datasheet: Download DCR504ST10 datasheet File size : 743 kB
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Datasheet text preview:
DCR504ST
DCR504ST
Phase Control Thyristor Advance Information
Supersedes January 2000version, DS4448 -4.0 DS4448 -5.0 July 2001
FEATURES
s Double Side Cooling s High Surge Capability s High Mean Current s Fatigue Free
KEY PARAMETERS VDRM IT(AV) ITSM dVdt dI/dt 1400V 456A 6800A 1000V/µs 700A/µs
APPLICATIONS
s High Power Drives s High Voltage Power Supplies s DC Motor Control
VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM VRRM V 1400 1300 1200 1100 1000 Conditions
DCR504ST14 DCR504ST13 DCR504ST12 DCR504ST11 DCR504ST10
Tvj = 0° to 125°C, IDRM = IRRM = 30mA, VDRM, VRRM tp = 10ms, V DSM & V RSM = VDRM & VRRM + 100V respectively
Outline type code: T See Package Details for further information. Fig. 1 Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR504ST12 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
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DCR504ST
CURRENT RATINGS
Tcase = 60°C unless stated otherwise Symbol Double Side Cooled I T(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 456 717 655 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) I T(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 322 505 425 A A A
CURRENT RATINGS
Tcase = 80°C unless stated otherwise Symbol Double Side Cooled I T(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 355 557 495 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) I T(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 248 390 310 A A A
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DCR504ST
SURGE RATINGS
Symbol I TSM I2t I TSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; Tcase = 125oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 125oC VR = 0 Max. 5.5 150x 103 6.8 231 x 103 Units kA A2s kA A2s
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 4.5kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) T stg Storage temperature range Clamping force 55 4.0 125 125 5.0
o
Min. dc Anode dc -
Max. 0.063 0.11 0.147 0.02 0.04 135
Units
o
C/W
o
C/W C/W C/W C/W
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C
C C
o
kN
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DCR504ST
DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt Parameter Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At VRRM/VDRM, Tcase = 125oC To 67% VDRM Tj = 125oC. Gate open circuit. From 67% VDRM to 700A Gate source 10V, 5 tr 0.5µs, Tj = 125oC At Tvj = 125oC At Tvj = 125oC VD = 67% VDRM, Gate source 20V, 10 dIG/dt = 20A/µs, Tj = 25oC Tj = 25oC, VD = 10V Tj = 25oC, Rg-k = Repetitive 50Hz Non-repetitive Typ. Max. 30 1000 350 700 1.05 0.8 0.8 200 30 Units mA V/µs A/µs A/µs V m µs mA mA µs
dI/dt
Rate of rise of on-state current
VT(TO) rT t gd IL IH tq
Threshold voltage On-state slope resistance Delay time Latching current Holding current
Turn-off time
IT = 300A, tp = 1ms, Tj = 125°C, VR = 50V, dIRR/dt = 20A/µs, VDR = 67% VDRM, dVDR/dt = 20V/µs linear.
300
-
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode See table, gate characteristics curve Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC At 67% VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Max. 3.0 150 0.25 30 0.25 5 10 100 5 Units V mA V V V V A W W
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DCR504ST
CURVES
2000 Measured under pulse conditions Tj = 125°C 1000 d.c. Half wave
800
Instantaneous on-state current, IT - (A)
1500
Mean power dissipation - (W)
3 phase 600 6 phase
1000
400
500 200
0 1.0
1.5 2.0 Instantaneous on-state voltage, VT - (V)
2.5
0 0
200 400 600 Mean on-state current, IT(AV) - (A)
800
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Dissipation curves
VTM Equation:VTM = A + Bln (IT) + C.IT+D.IT A = 0.351375 B = 0.171814 C = 0.000964 D = 0.020616 these values are valid for Tj = 125°C for IT 500A to 1800A Where
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