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Part: DCR1279SD45
Category:
Discrete
Description: Phase Control Thyristor
Company: Dynex Semiconductor
Datasheet: Download DCR1279SD45 datasheet File size : 848 kB
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DCR1279SD
DCR1279SD
Phase Control Thyristor Advance Information
Replaces March 1998 version, DS4643-3.2 DS4643-4.0 January 2000
APPLICATIONS
s High Power Drives s High Voltage Power Supplies s DC Motor Control
KEY PARAMETERS VDRM 4800V IT(AV) 1088A ITSM 15000A dVdt* 300V/µs dI/dt 200A/µs
*Higher dV/dt selections available
FEATURES
s Double Side Cooling s High Surge Capability s High Mean Current s Fatigue Free
VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM VRRM V 4800 4700 4600 4500 4400 Conditions
DCR1279SD48 DCR1279SD47 DCR1279SD46 DCR1279SD45 DCR1279SD44
Tvj = 0° to 125°C, IDRM = IRRM = 150mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Outline type code: D. See package outline for further information.
Lower voltage grades available.
CURRENT RATINGS
Tcase = 60°C unless stated otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load, 1088 1709 1574 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) I T(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 762 1197 1034 A A A 1/9
DCR1279SD
CURRENT RATINGS
Tcase = 80°C unless stated otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load, 860 1350 1055 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 590 930 860 A A A
SURGE RATINGS
Symbol I TSM I2t I TSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; Tcase = 125oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 125oC VR = 0 Max. 12.0 0.72 x 106 15.0 1.12 x 106 Units kA A2s kA A2s
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 22.0kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) T stg Storage temperature range Clamping force -55 22.0 125 125 24.0
o
Min. dc Anode dc -
Max. 0.020 0.036 0.044 0.004 0.008 135
Units
o
C/W
o
C/W C/W C/W C/W
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C
C C
o
kN
2/9
DCR1279SD
DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt Parameter Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At VRRM/VDRM, Tcase = 125oC To 67% VDRM Tj = 125oC. Gate open circuit. From 67% VDRM to 1000A Gate source 10V, 5 tr 0.5µs, Tj = 125oC At Tvj = 125oC At Tvj = 125oC VD = 67% VDRM, Gate source 30V, 15 tr = 0.5µs, Tj = 25oC Tj = 25oC, VD = 5V Tj = 25oC, Rg-k = Repetitive 50Hz Non-repetitive Typ. 300 Max. 150 300 100 200 1.14 0.587 2.5 1000 500 Units mA V/µs A/µs A/µs V m µs mA mA
dI/dt
Rate of rise of on-state current
VT(TO) rT tgd IL IH
Threshold voltage On-state slope resistance Delay time Latching current Holding current
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode See table, fig.4 Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC At VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Max. 4.0 400 0.25 30 0.25 5 10 150 5 Units V mA V V V V A W W
3/9
DCR1279SD
CURVES
3000 Measured under pulse conditions
2500
2000
Instantaneous on-state current IT - (A)
1500 Tj = 125°C
1000
500
0 1.0
1.5
2.0 2.5 Instantaneous on-state voltage VT - (V)
3.0
Fig.1 Maximum (limit) on-state characteristics
4/9
DCR1279SD
3500
d.c. 3000 Half wave
3 phase 6 phase 2500
Mean power dissipation - (W)
2000
1500
1000
500
0 0 500 1000 Mean on-state current IT(AV) - (A) 1500 2000
Fig.2 Dissipation curves 5/9
Others parts begin by dc
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