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Part: DCR1277SD34
Category:
Discrete
Description: Phase Control Thyristor
Company: Dynex Semiconductor
Datasheet: Download DCR1277SD34 datasheet File size : 848 kB
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Datasheet text preview:
DCR1277SD
DCR1277SD
Phase Control Thyristor
Replaces March 1998 version, DS4552-3.3 DS4552-4.0 January 2000
APPLICATIONS
s High Power Drives. s High Voltage Power Supplies. s DC Motor Control.
KEY PARAMETERS VDRM 3600V IT(AV) 1259A ITSM 23750A dVdt* 300V/µs dI/dt 150A/µs
*Higher dV/dt selections available
FEATURES
s Double Side Cooling. s High Surge Capability. s High Mean Current. s Fatigue Free.
VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM VRRM V 3600 3500 3400 3300 3200 Conditions
DCR1277SD36 DCR1277SD35 DCR1277SD34 DCR1277SD33 DCR1277SD32
Tvj = 0° to 125°C, IDRM = IRRM = 150mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Outline type code: D. See Package Details for further information.
Lower voltage grades available.
CURRENT RATINGS
Tcase = 60°C unless stated otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 1259 1977 1832 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) I T(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 885 1390 1209 A A A 1/9
DCR1277SD
CURRENT RATINGS
Tcase = 80°C unless stated otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 995 1565 1420 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 690 1085 920 A A A
SURGE RATINGS
Symbol I TSM I2t I TSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; Tcase = 125oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 125oC VR = 0 Max. 19.0 1.8 x 106 23.75 2.82 x 106 Units kA A2s kA A2s
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 22.0kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) T stg Storage temperature range Clamping force -55 20.0 125 125 24.0
o
Min. dc Anode dc -
Max. 0.020 0.036 0.044 0.004 0.008 135
Units
o
C/W
o
C/W C/W C/W C/W
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C
C C
o
kN
2/9
DCR1277SD
DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt Parameter Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At VRRM/VDRM, Tcase = 125oC To 67% VDRM Tj = 125oC. From 67% VDRM to 1000A Gate source 10V, 5 tr 0.5µs, Tj = 125oC At Tvj = 125oC At Tvj = 125oC VD = 67% VDRM, Gate source 30V, 15 tr = 0.5µs, Tj = 25oC Repetitive 50Hz Non-repetitive Typ. Max. 150 300 100 150 0.95 0.45 2.5 Units mA V/µs A/µs A/µs V m µs
dI/dt
Rate of rise of on-state current
VT(TO) rT tgd
Threshold voltage On-state slope resistance Delay time
tq
Turn-off time
IT = 2000A, tp = 1ms, Tj = 125°C, VR = 50V, dIRR/dt = 5A/µs, VDR = 67% VDRM, dVDR/dt = 20V/µs linear
Tj = 25oC, VD = 5V Tj = 25oC, Rg-k =
500
650
µs
IL IH
Latching current Holding current
700 200
1000 500
mA mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode See table, fig.4 Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC At VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Max. 4.0 400 0.25 30 0.25 5 10 150 5 Units V mA V V V V A W W
3/9
DCR1277SD
CURVES
3000 Measured under pulse conditions
2500
2000
Instantaneous on-state current IT - (A)
1500 Tj = 125°C
1000
500
0 0.5
1.0
1.5 2.0 Instantaneous on-state voltage VT - (V)
2.5
Fig.1 Maximum (limit) on-state characteristics
4/9
DCR1277SD
4000 d.c. Half wave
6 phase
3 phase 3000
Mean power dissipation - (W)
2000
1000
0 0 500 1000 Mean on-state current IT(AV) - (A) 1500 2000
Fig.2 Dissipation curves
5/9
Others parts begin by dc
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