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Part: DCR1275SD26
Category:
Discrete
Description: Phase Control Thyristor
Company: Dynex Semiconductor
Datasheet: Download DCR1275SD26 datasheet File size : 848 kB
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DCR1275SD
DCR1275SD
Phase Control Thyristor Advance Information
Replaces March 1998 version, DS4551-3.3 DS4551-4.0 January 2000
APPLICATIONS
s High Power Drives s High Voltage Power Supplies s DC Motor Control
KEY PARAMETERS VDRM 2800V IT(AV) 1514A ITSM 28000A dVdt* 300V/µs dI/dt 150A/µs
*Higher dV/dt selections available
FEATURES
s Double Side Cooling s High Surge Capability s High Mean Current s Fatigue Free
VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM VRRM V 2800 2700 2600 2500 2400 Conditions
DCR1275SD28 DCR1275SD26 DCR1275SD25 DCR1275SD24 DCR1275SD23
Tvj = 0° to 125°C, IDRM = IRRM = 150mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Outline type code: D. See Package Details for further information.
Lower voltage grades available.
CURRENT RATINGS
Tcase = 60°C unless stated otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 1514 2379 2148 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) I T(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 1047 1645 1386 A A A 1/9
DCR1275SD
CURRENT RATINGS
Tcase = 80°C unless stated otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 1185 1860 1640 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 805 1265 1035 A A A
SURGE RATINGS
Symbol I TSM I2t I TSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; Tcase = 125oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 125oC VR = 0 Max. 22.5 2.53 x 106 28.0 3.92 x 106 Units kA A2s kA A2s
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 22.0kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) T stg Storage temperature range Clamping force -55 20.0 125 125 24.0
o
Min. dc Anode dc -
Max. 0.020 0.036 0.044 0.004 0.008 135
Units
o
C/W
o
C/W C/W C/W C/W
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C
C C
o
kN
2/9
DCR1275SD
DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt Parameter Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At VRRM/VDRM, Tcase = 125oC To 67% VDRM Tj = 125oC. From 67% VDRM to 1000A Gate source 10V, 5 tr = 1µs, Tj = 125oC At Tvj = 125oC At Tvj = 125oC VD = 67% VDRM, Gate source 30V, 15 tr = 0.5µs, Tj = 25oC Repetitive 50Hz Non-repetitive Typ. Max. 150 300 100 150 0.92 0.276 1.5 Units mA V/µs A/µs A/µs V m µs
dI/dt
Rate of rise of on-state current
VT(TO) rT tgd
Threshold voltage On-state slope resistance Delay time
tq
Turn-off time
IT = 1000A, tp = 1ms, Tj = 125°C, VR = 50V, dIRR/dt = 20A/µs, VDR = 67% VDRM, dVDR/dt = 20V/µs linear
Tj = 25oC, VD = 5V Tj = 25oC, Rg-k =
500
650
µs
IL IH
Latching current Holding current
300 200
1000 500
mA mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode See table, fig.4 Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC At VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Max. 4.0 400 0.25 30 0.25 5 10 100 5 Units V mA V V V V A W W
3/9
DCR1275SD
CURVES
5000 Measured under pulse conditions
4000
Instantaneous on-state current, IT - (A)
3000
Tj = 125°C
2000
1000
0 0.5
1.0 1.5 2.0 Instantaneous on-state voltage, VT - (V)
2.5
Fig.1 Maximum (limit) on-state characteristics
4/9
DCR1275SD
4000
Half wave 3 phase 6 phase 3000
d.c.
Mean power dissipation - (W)
2000
1000
0 0 500 1000 1500 Mean on-state current IT(AV) - (A) 2000
2500
G SS OC Fig.2 Dissipation curves
S
5/9
Others parts begin by dc
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