|
|
Part: S9004P2CT
Category:
Discrete
Description: 30a Schottky Barrier Rectifier
Company: Diodes, Inc.
Datasheet: Download S9004P2CT datasheet File size : 172 kB
Request For quote: Find where to buy S9004P2CT
Datasheet text preview:
S9004P2CT
30A SCHOTTKY BARRIER RECTIFIER Features
· · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material - UL Flammability Classification 94V-0
TO-220AB Dim
L B C K D A M
Min 14.22 9.65 2.54 5.84 ¾ 12.70 2.29 0.51 3.53Æ 3.56 1.14 0.30 2.03
Max 15.88 10.67 3.43 6.86 6.25 14.73 2.79 1.14 4.09Æ 4.83 1.40 0.64 2.92
A B C D E G H J
G
Mechanical Data
· · · · · · Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Body Weight: 2.24 grams (approx) Mounting Position: Any Marking: Type Number
J
E N
K L M
HH
P
N P
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Minimum Avalanche Breakdown Voltage per element (Note 1) @ 1.5A Average Rectified Output Current (Note 1 & 3) Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) (Note 3) Instantaneous Forward Voltage Drop Peak Reverse Current at Rated DC Blocking Voltage @ iF = 15A @ TC = 25°C @ TC = 125°C Symbol VRRM VR W M VR ¾ IO IFSM vFM IRM Cj dv/dt W RqJc Tj, TSTG
@ TA = 25°C unless otherwise specified
S9004P2CT 60 70 30 250 0.56 2.0 150 470 10000 10 1.5 -60 +150
Unit V V A A V mA pF V/ms mJ K/W °C
Typical Junction Capacitance per element (Note 2) Voltage Rate of Change at Rated DC Blocking Voltage Non-repetitive Avalanche Energy (Constant Current During a 20ms pulse) @ TC = 125°C Typical Thermal Resistance Junction to Case per element (Note 1) Operating and Storage Temperature Range
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. IFSM and IO values shown are for entire package. For any single diode the values are one half of listed value.
DS23027 Rev. P-5
1 of 2
S9004P2CT
40
IF, INSTANTANEOUS FORWARD CURRENT (A)
50
100
I(AV), AVERAGE FORWARD CURRENT (A)
30
10
20
1.0
10
0 0 50 100 150 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve
1000
0.1 0.2 0.4 0.6
Tj = 25°C Pulse width = 300µs 2% duty cycle
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics
IF, INSTANTANEOUS REVERSE CURRENT (A)
1000
Tj = 25°C
100
CJ, CAPACITANCE (pF)
Tj = 25°C Pulse width = 300µs 2% duty cycle
100
10
1.0
10 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance
0
20
40
60
VF, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 3 Typical Reverse Characteristics
DS23027 Rev. P-5
2 of 2
S9004P2CT
Others parts begin by s9
S9-1 S9-2
|
|
|
