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Part: DDTA115TE
Category:
Description: 50V; 100mA PNP Pre-biased Small Signal Surface Mount Transistor
Company: Diodes, Inc.
Datasheet: Download DDTA115TE datasheet File size : 68 kB
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Datasheet text preview:
DDTA (R1-ONLY SERIES) E
PNP PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR Features
NEW PRODUCT
· · ·
Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistor, R1 only
UNDER DEVELOPMENT
TOP VIEW
SOT-523
3C B 2B G H K N M E1 A C
Dim A B C D G H J K L M N
Min 0.15 0.75 1.45 ¾ 0.90 1.50 0.00 0.60 0.10 0.10 0.45
Max 0.30 0.85 1.75 ¾ 1.10 1.70 0.10 0.80 0.30 0.20 0.65
Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50
Mechanical Data
· · · · · Case: SOT-523, Molded Plastic Case material - UL Flammability Rating 94V-0 Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.002 grams (approx.)
J
D
L
P/N DDTA113TE DDTA123TE DDTA143TE DDTA114TE DDTA124TE DDTA144TE DDTA115TE DDTA125TE
R1 (NOM) 1K 2.2K 4.7K 10K 22K 47K 100K 200K
MARKING P01 P03 P07 P12 P16 P19 P23 P25
(2) B
R1
C (3)
All Dimensions in mm
E (1) SCHEMATIC DIAGRAM
Maximum Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation
@ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC (Max) Pd Tj, TSTG Value -50 -50 -5 -100 150 -55 to +150 Unit V V V mA mW °C
Characteristic
Operating and Storage and Temperature Range
DS30319 Rev. 1 - 1
1 of 2
DDTA (R1-ONLY SERIES) E
Electrical Characteristics
@ TA = 25°C unless otherwise specified Symbol BVCBO BVCEO BVEBO ICBO IEBO Min -50 -50 -5 ¾ ¾ Typ ¾ ¾ ¾ ¾ ¾ Max Unit ¾ ¾ ¾ -0.5 -0.5 V V V mA mA IC = -50mA IC = -1mA IE = -50mA VCB = -50V VEB = -4V IC/IB = -10mA/-1mA IC/IB = -5mA/-0.5mA IC/IB = -2.5mA/-.25mA IC/IB = -1mA/-.1mA IC/IB = -5mA/-0.5mA IC/IB = -2.5mA/-.25mA IC/IB = -1mA/-0.1mA IC/IB = -.5mA/-.05mA IC = -1mA, VCE = -5V VCE = -10V, IE = 5mA, f = 100MHz DDTA113TE DDTA123TE DDTA143TE DDTA114TE DDTA124TE DDTA144TE DDTA115TE DDTA125TE Test Condition
NEW PRODUCT
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current
Collector-Emitter Saturation Voltage
VCE(sat)
¾
¾
-0.3
V
DC Current Transfer Ratio Gain-Bandwidth Product* * Transistor - For Reference Only
hFE fT
100 ¾
250 250
600 ¾
¾ MHz
UNDER DEVELOPMENT
DS30319 Rev. 1 - 1
2 of 2
DDTA (R1-ONLY SERIES) E
Others parts begin by dd
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