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Part: DDTA115TCA
Category:
Description: 50V; 100mA PNP Pre-biased Small Signal Surface Mount Transistor
Company: Diodes, Inc.
Datasheet: Download DDTA115TCA datasheet File size : 68 kB
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Datasheet text preview:
DDTA (R1-ONLY SERIES) CA
PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR Features
NEW PRODUCT
· · ·
UNDER DEVELOPMENT
A 3C TOP VIEW B C
Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistor, R1 only
SOT-23 Dim A B C D E G
K J L M
Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076
Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178
Mechanical Data
· · · · · Case: SOT-23, Molded Plastic Case material - UL Flammability Rating 94V-0 Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approx.)
2B E G H E1 D
H J K L
P/N DDTA113TCA DDTA123TCA DDTA143TCA DDTA114TCA DDTA124TCA DDTA144TCA DDTA115TCA DDTA125TCA
R1 (NOM) 1K 2.2K 4.7K 10K 22K 47K 100K 200K
MARKING P01 P03 P07 P12 P16 P19 P23 P25
(2) B
R1
C (3)
M
All Dimensions in mm
E (1) SCHEMATIC DIAGRAM
Maximum Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation
@ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC (Max) Pd Tj, TSTG Value -50 -50 -5 -100 200 -55 to +150 Unit V V V mA mW °C
Characteristic
Operating and Storage and Temperature Range
DS30335 Rev. 1 - 1
1 of 2
DDTA (R1-ONLY SERIES) CA
Electrical Characteristics
@ TA = 25°C unless otherwise specified Symbol BVCBO BVCEO BVEBO ICBO IEBO Min -50 -50 -5 ¾ ¾ Typ ¾ ¾ ¾ ¾ ¾ Max Unit ¾ ¾ ¾ -0.5 -0.5 V V V mA mA IC = -50mA IC = -1mA IE = -50mA VCB = -50V VEB = -4V IC/IB = -10mA/-1mA IC/IB = -5mA/-0.5mA IC/IB = -2.5mA/-.25mA IC/IB = -1mA/-.1mA IC/IB = -5mA-/0.5mA IC/IB = -2.5mA/-.25mA IC/IB = -1mA/-0.1mA IC/IB = -.5mA/-.05mA IC = -1mA, VCE = -5V VCE = -10V, IE = 5mA, f = 100MHz DDTA113TCA DDTA123TCA DDTA143TCA DDTA114TCA DDTA124TCA DDTA144TCA DDTA115TCA DDTA125TCA Test Condition
NEW PRODUCT
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current
Collector-Emitter Saturation Voltage
VCE(sat)
¾
¾
-0.3
V
DC Current Transfer Ratio Gain-Bandwidth Product* * Transistor - For Reference Only
hFE fT
100 ¾
250 250
600 ¾
¾ MHz
UNDER DEVELOPMENT
DS30335 Rev. 1 - 1
2 of 2
DDTA (R1-ONLY SERIES) CA
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