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Part: J309
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> PHEMTs
Description: 25 V, N-channel JFET High Frequency Amplifier
Company: Calogic, LLC
Datasheet: Download J309 datasheet File size : 209 kB
Request For quote: Find where to buy J309
Datasheet text preview:
N-Channel JFET High Frequency Amplifier
CORPORATION
J308 J310 / SST308 SST310
FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V Continuous Forward Gate Current . . . . . . . . . . . . . . . . -10mA Storage Temperature Range . . . . . . . . . . . . . -55oC to +150oC Operating Temperature Range . . . . . . . . . . . -55oC to +135oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . 3.27mW/ oC
NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or an y other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
SOT-23 G
TO-92
· Industry Standard Part in Low Cost Plastic Package · High Power Gain · LowaNoise · Dyn mic Range Greater Than 100dB · Easily Matched to 75 Input · VHF/UHF Amplifiers a · Osxceilrls tors · Mi
PIN CONFIGURATION APPLICATIONS
ORDERING INFORMATION Part Package Temperature Range J308-310 Plastic TO-92 -55oC to +135oC SST308-310 Plastic SOT-23 -55oC to +135oC For Sorted Chips in Carriers see U308 series.
D S
G DS
5021
PRODUCT MARKING (SOT-23) SST3 08 Z08 SST3 09 SST3 10 Z09 Z10
J308 J310 / SST308 SST310
CORPORATION
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYM BOL BVGSS IGSS VGS(off) IDSS VGS(f) gfs gos g fg g og PARAMETER MIN Gate -Sou rce Breakdown Volta ge Gate Reverse Current Gate -Sou rce Cutoff Voltage Satura tio n Drain Current (Not e 1) Gate -Sou rce Forward Voltage Com mon-Source Forward Transconductance Com mon -Source Output Con du ctan ce Com mon-Gate Forward Tra nscond uctan ce Com mon Gate Output Con du ctan ce 13,000 150 8,000 17,0 00 250 13,000 150 -1.0 12 -25 -1.0 -1.0 -6.5 60 1. 0 10,000 17,000 250 12,000 150 -1.0 12 308 TYP M AX MIN -25 -1.0 -1 .0 -4.0 30 1. 0 8,000 17,000 250 VDS = 10V ID = 10mA (Not e 2) -2.0 24 309 TYP M AX MIN -25 -1.0 -1. 0 -6.5 60 1.0 310 TYP MAX V nA µA V mA V IG = -1µA, VDS = 0 VGS = -15V, VDS = 0 TA = 125 o UNITS TEST CONDITIONS
VDS = 10V, ID = 1nA VDS = 10V, VGS = 0 VDS = 0, IG = 1mA
µS
f = 1kHz
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC unless otherwise specified)
SYMBOL Cgd Cgs en PARAMETER Gate-Drain Capacitance Gate -Sou rce Capacitance Equ ivalent Short-Circuit Inp ut Noise Voltage Com mon-Sou rce Forward Tran scondu ctan ce Com mon-Gate Input Con du cta nce Com mon -Sou rce Input Con du cta nce Com mon-Sou rce Output Con du cta nce Com mon-Gate Power Gain at Noise Match Noise Figure Com mon-Gate Power Gain at Noise Match Noise Figure 308 1.8 4.3 10 2.5 5.0 309 1.8 4.3 10 2.5 5.0 310 1.8 4.3 2.5 5.0 nV UNITS TEST CONDITIONS VDS = 10V, VGS = -10 f = 1MHz (No te 2) f = 100Hz (No te 2) MIN TYP MAX MIN TYP MAX MIN TYP MAX pF
V S = 10V, 0 1ü /ç4«ónVç XIÇÀç XäBÇÇG`DQXóHzâÏé Hz ç ID· = 10mA 12 14 0.4 0.15 16 1.5 11 2.7 dB VDS = 10V, ID = 10mA (Note 2)
Re(Vfs) Re(Vfg) Re(Vis) Re(Vos) Gpg NF Gpg NF
12 14 0.4 0.15 16 1.5 11 2.7
12 14 0.4 0.15 16 1.5 11 2.7
µS f = 105MHz
f = 450MHz
NOTES: 1. Pulse test PW 300µs, duty cycle 3%. 2. Fo r design reference only, not 100% tested.
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