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Part: IT1750
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description: 25 V, N-channel Enhancement Mode MOSFET General Purpose Amplifier Switch
Company: Calogic, LLC
Datasheet: Download IT1750 datasheet File size : 69 kB
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Datasheet text preview:
N-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch
IT1750
FEATURES
CORPORATION
· Low ON Resistance · Low Cdg i Gain · HoghThreshold Voltage ·L w
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source and Gate-Source Voltage . . . . . . . . . . . . . . 25V Peak Gate-Source Voltage (Note 1) . . . . . . . . . . . . . . . ±125V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . 3mW/ oC
NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or an y other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TO-72
ORDERING INFORMATION Part
D C G S
Package Hermetic TO-72 Sorted Chips in Carriers
Temperature Range -55oC to +150oC -55oC to +150oC
IT1750 XIT1750
1003
ELECTRICAL CHARACTERISTICS (TA = 25oC, Body connected to Source and VBS = 0 unless otherwise specified)
SYMBOL VGS (t h) IDSS IGSS BVDSS rDS(on) ID(on) Yfs Cis s Cdg PARAMETER Gate to Source Threshold Voltage Drai n Leakage Current Gate Leakage Current Drai n Breakdown Voltage Drai n to Source on Resistance Drai n Current Fo rward Transadmittance Tota l Gate Input Capacitance Gate to Drain Capacitance 10 3, 000 6.0 1.6 25 50 MIN 0.50 MAX 3.0 10 (See note 2) V ohms mA µS pF pF ID = 10µA, VGS = 0 VGS = 20V VDS = VGS =10V VDS = 10V, ID = 10mA, f = 1kHz ID = 10mA, VDS = 10V, f = 1MHz (Note 3) VDG = 10V, f = 1MHz (Note 3) UNITS V nA TEST CONDITIONS VDS = VGS, I D = 10µA VDS = 10V, VGS = 0
NOTES: 1. Devices must not be tested at ±125V more than once nor longer than 300ms. 2. Actu al gate current is immeasurable. Package suppliers are required to guarantee a package leakage of < 10pA. External package leakage is the dominant mode which is sensitive to both transient and storage environment, which cannot be guaranteed. 3. Fo r design reference only, not 100% tested.
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