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Part: 13PD150-ST
Category:
Optoelectronics
-> Photosensors
-> Photodiodes
Description: High Performance Ingaas P-i-n Photodiode
Company: Anadigics, Inc.
Datasheet: Download 13PD150-ST datasheet File size : 377 kB
Request For quote: Find where to buy 13PD150-ST
Datasheet text preview:
High Performance InGaAs p-i-n Photodiode
`ST' Active Device Mount
13PD150-ST
The 13PD150-ST, an InGaAs photodiode with a 150µm-diameter photosensitive region packaged in a TO-46 header and aligned in an AT&T ST active device mount, is intended for high coupling efficiency to multi-mode fiber in moderate-to-high speed applications. Planar semiconductor design and dielectric passivation provide low noise performance. Reliability is assured by hermetic sealing and a 100% purge burn-in ( 200oC, 15 hours, Vr = 20V ). The ST receptacle is suitable for bulkhead and PC board mounting.
Features
Planar Structure Dielectric Passivation 100% Purge Burn-In High Responsivity
Device Characteristics:
Parameters
Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature
Test Conditions
-5V -5V 1300nm -
Min
0.5 1.5 0.7 -
Typ
-
Max
-20 nA pF 0.5
Units
Volts
2.5 2.25 0.8 -
A/W ns
Absolute Maximum Ratings
20 Volts 5 mA 1 mA o -40 C to + 85oC -40oC to + 85oC 250oC
829 Flynn Road, Camarillo, CA 93012
tel(805)445-4500
fax(805)445-4502
Others parts begin by 13
13-1 13-2 13-3 13-4
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