|
|
Part: AM29F100B-120DTC
Category:
Memory
-> Flash
Description: 1 Megabit ( 128 K X 8-bit/64 K X 16-bit ) CMOS 5.0 Volt-only, Boot Sector Flash Memory-die Revision 1
Company: Advanced Micro Devices, Inc.
Datasheet: Download AM29F100B-120DTC datasheet File size : 1143 kB
Request For quote: Find where to buy AM29F100B-120DTC
Datasheet text preview:
SUPPLEMENT
Am29F100 Known Good Die
1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory--Die Revision 1
DISTINCTIVE CHARACTERISTICS
s Single power supply operation -- 5.0 V ± 10% for read, erase, and program operations -- Simplifies system-level power requirements s High performance -- 120 ns maximum access time s Low power consumption -- 20 mA typical active read current for byte mode -- 28 mA typical active read current for word mode -- 30 mA typical program/erase current -- 25 µA typical standby current s Flexible sector architecture -- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and one 64 Kbyte sectors (byte mode) -- One 8 Kword, two 4 Kword, one 16 Kword, and one 32 Kword sectors (word mode) -- Any combination of sectors can be erased -- Supports full chip erase s Top or bottom boot block configurations available s Sector protection -- Hardware-based feature that disables/reenables program and erase operations in any combination of sectors -- Sector protection/unprotection can be implemented using standard PROM programming equipment -- Temporary Sector Unprotect feature allows insystem code changes in protected sectors s Embedded Algorithms -- Embedded Erase algorithm automatically pre-programs and erases the chip or any combination of designated sector -- Embedded Program algorithm automatically programs and verifies data at specified address s Minimum 100,000 program/erase cycles guaranteed s Compatible with JEDEC standards -- Pinout and software compatible with single-power-supply flash -- Superior inadvertent write protection s Data Polling and Toggle Bits -- Provides a software method of detecting program or erase cycle completion s Ready/Busy pin (RY/BY#) -- Provides a hardware method for detecting program or erase cycle completion s Erase Suspend/Erase Resume -- Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation s Hardware RESET# pin -- Hardware method of resetting the device to reading array data s Tested to datasheet specifications at temperature s Quality and reliability levels equivalent to standard packaged components
Publication# 21235 Rev: B Amendment/0 Issue Date: January 1998
SUPPLEMENT
GENERAL DESCRIPTION
The Am29F100 in Known Good Die (KGD) form is a 1 Mbit, 5.0 Volt-only Flash memory. AMD defines KGD as sta ndard product in die form, tested for functionality and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form. Am29F100 Features The Am29F100 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 131,072 bytes or 65,536 words. Wordwide data appears on DQ0-DQ15; byte-wide data on DQ0-DQ7. The device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. A 12.0 volt VPP is not required for program or erase o pe rati on s. The device can also be programmed or erased in standard EPROM programmers. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device requires only a single 5.0 volt power supply for both read and write functions. Internally genera t e d and regulated voltages are provided for the program and erase operations. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of t he device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program c o m m a n d sequence. This invokes the Embedded Program algorithm--an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Device erasure occurs by executing the erase command sequence. This invokes the Embedded Erase algorithm--an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the
device automatically times the erase pulse widths and verifies proper cell margin. T h e host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command. The Erase Suspend feature enables the system to put erase on hold for any period of time to read data from, or program data to, a sector that is not being erased. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is erased when shipped from the factory. The hardware data protection measures include a low VCC detector automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory, and is implemented using standard EPROM programmers. The temporary sector unprotect feature allows in-system changes to protected sectors. The hardware RESET# pin terminates any operation in progress and resets the internal state machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash memory. The system can place the device into the standby mode. Power consumption is greatly reduced in this mode. A M D 's Flash technology combines years of Flash m e m o r y manufacturing experience to produce the h i g h e s t l e v e l s o f q u a l i t y, re l i a b i l i t y , a n d c o s t e ffe cti ven ess. The device electrically erases all bits with in a sector simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a time using the EPROM programming mechanism of hot electron injection.
ELECTRICAL SPECIFICATIONS
Refer to the Am29F100 data sheet, document number 1 8 9 2 6 , for full electrical specifications on the Am29F100.
2
Am29F100 Known Good Die
SUPPLEMENT
PRODUCT SELECTOR GUIDE
Family Part Number Speed Option (VCC = 5.0 V ± 10%) Max Access Time, tACC (ns) Max CE# Access, tCE (ns) Max OE# Access, tOE (ns) Am29F100 KGD -120 120 120 50
DIE PHOTOGRAPH
Orientation relative to leading edge of tape and reel
Orientation relative to top left corner of Gel-Pak
DIE PAD LOCATIONS
11 10 9 8 7 6 5 4 3 2 1 47 46 45 44 43 42 41 40 39 38 37 36
12 13 14
35 34
AMD logo location
33
15 16 17 18 19 20 21 22 23
24
25 26 27 28 29
30 31 32
Am29F100 Known Good Die
3
SUPPLEMENT
PAD DESCRIPTION
Pad 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 Signal V CC DQ4 DQ12 DQ5 DQ13 DQ6 DQ14 NC DQ7 NC NC DQ15 V SS BYTE# A15 A14 A13 A12 A11 A10 A9 A8 WE# RESET# RY/BY# A7 A6 A5 A4 A3 A2 A1 A0 CE# V SS OE# NC NC NC DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 Pad Center (mils) X Y 0.0 0.0 16.5 0.6 27.0 0.6 37.8 0.6 48.4 0.6 59.1 0.6 69.7 0.6 80.5 0.6 91.0 0.6 103 0.6 109.6 0.6 114.7 20.6 114.7 29.5 113.3 37.0 110.2 121.9 100.0 121.9 90.0 121.9 79.9 121.9 69.9 121.9 59.9 121.9 49.9 121.9 39.9 121.9 29.9 121.9 47.8 121.9 61.2 121.9 71.1 121.9 81.1 121.9 91.0 121.9 101.1 121.9 114.5 121.9 121.4 121.9 131.4 121.9 134.5 41.1 134.5 32.7 134.5 17.6 130.7 0.6 120.9 0.6 114.2 0.6 107.5 0.6 91.6 0.6 80.2 0.6 69.4 0.6 58.9 0.6 48.1 0.6 37.5 0.6 26.7 0.6 16.2 0.6 Pad Center (millimeters) X Y 0.00 0.00 0.42 0.02 0.69 0.02 0.96 0.02 1.23 0.02 1.50 0.02 1.77 0.02 2.04 0.02 2.31 0.02 2.62 0.02 2.78 0.02 2.91 0.52 2.91 0.75 2.88 0.94 2.80 3.10 2.54 3.10 2.29 3.10 2.03 3.10 1.78 3.10 1.52 3.10 1.27 3.10 1.01 3.10 0.76 3.10 1.21 3.10 1.55 3.10 1.81 3.10 2.06 3.10 2.31 3.10 2.57 3.10 2.91 3.10 3.08 3.10 3.34 3.10 3.42 1.04 3.42 0.83 3.42 0.45 3.32 0.02 3.07 0.02 2.90 0.02 2.73 0.02 2.33 0.02 2.04 0.02 1.76 0.02 1.50 0.02 1.22 0.02 0.95 0.02 0.68 0.02 0.41 0.02
Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
4
Am29F100 Known Good Die
SUPPLEMENT
ORDERING INFORMATION Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: Am29F100 T -120 DP C 1 DIE REVISION This number refers to the specific AMD manufacturing process and product technology reflected in this document. It is entered in the revision field of AMD standard product nomenclature. TEMPERATURE RANGE C = Commercial (0°C to +70°C) I = Industrial (40°C to +85°C) E = Extended (55°C to +125°C) PACKAGE TYPE AND MINIMUM ORDER QUANTITY DP = Waffle Pack 180 die per 5 tray stack DG = DT = DW = Gel-Pak® Die Tray 420 die per 6 tray stack SurftapeTM (Tape and Reel) 1600 per 7-inch reel Gel-Pak® Wafer Tray (sawn wafer on frame) Call AMD sales office for minimum order quantity
SPEED OPTION See Valid Combinations BOOT CODE SECTOR ARCHITECTURE T = Top sector B = Bottom sector DEVICE NUMBER/DESCRIPTION Am29F100 Known Good Die 1 Megabit (128 K x 8-Bit/64K x 16-Bit) CMOS Flash Memory--Die Revision 1 5.0 Volt-only Program and Erase
Valid Combinations Am29F100T-120 Am29F100B-120 DPC 1, DPI 1, DPE 1, DGC 1, DGI 1, DGE 1, DTC 1, DTI 1, DTE 1, DWC 1, DWI 1, DWE 1
Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations.
Am29F100 Known Good Die
5
Others parts begin by am
AM-1 AM-2 AM-3 AM-4 AM-5 AM-6 AM-7 AM-8 AM-9 AM-10 AM-11 AM-12 AM-13 AM-14 AM-15 AM-16 AM-17 AM-18 AM-19 AM-20 AM-21 AM-22 AM-23 AM-24 AM-25 AM-26 AM-27 AM-28 AM-29 AM-30 AM-31 AM-32 AM-33 AM-34 AM-35 AM-36 AM-37 AM-38 AM-39 AM-40 AM-41 AM-42 AM-43 AM-44 AM-45 AM-46 AM-47 AM-48 AM-49 AM-50 AM-51 AM-52 AM-53 AM-54 AM-55 AM-56 AM-57 AM-58 AM-59 AM-60 AM-61 AM-62 AM-63 AM-64 AM-65 AM-66 AM-67 AM-68 AM-69 AM-70 AM-71 AM-72 AM-73 AM-74 AM-75 AM-76 AM-77 AM-78 AM-79 AM-80 AM-81 AM-82 AM-83 AM-84 AM-85 AM-86 AM-87 AM-88 AM-89 AM-90 AM-91 AM-92 AM-93 AM-94 AM-95 AM-96 AM-97 AM-98 AM-99 AM-100 AM-101 AM-102 AM-103 AM-104 AM-105
|
|
|
