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Part: AM29F016B-70EC
Category:
Memory
-> Flash
Description: 16 Megabit ( 2 M X 8-bit ) CMOS 5.0 Volt-only, Sector Erase Flash Memory-die Revision 1
Company: Advanced Micro Devices, Inc.
Datasheet: Download AM29F016B-70EC datasheet File size : 1483 kB
Request For quote: Find where to buy AM29F016B-70EC
Datasheet text preview:
SUPPLEMENT
Am29F016B Known Good Die
16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory--Die Revision 1
DISTINCTIVE CHARACTERISTICS
s 5.0 V ± 10%, single power supply operation -- Minimizes system level power requirements s Manufactured on 0.35 µm process technology s High performance -- 120 ns access time s Low power consumption -- 25 mA typical active read current -- 30 mA typical program/erase current -- <1 µA typical standby current (standard access time to active mode) s Flexible sector architecture -- 32 uniform sectors of 64 Kbytes each -- Any combination of sectors can be erased. -- Suppor ts full chip erase -- Group sector protection: A hardware method of locking sector groups to prevent any program or erase operations within that sector group Temporary Sector Group Unprotect allows code changes in previously locked sectors s Embedded Algorithms -- Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors -- Embedded Program algorithm automatically writes and verifies bytes at specified addresses s Minimum 100,000 write/erase cycles guaranteed s Compatible with JEDEC standards -- Pinout and software compatible with single-power-supply Flash standard -- Superior inadvertent write protection s Data# Polling and toggle bits -- Provides a software method of detecting program or erase cycle completion s Ready/Busy output (RY/BY#) -- Provides a hardware method for detecting program or erase cycle completion s Erase Suspend/Resume -- Suspends a sector erase operation to read data from, or program data to, a non-erasing sector, then resumes the erase operation s Hardware reset pin (RESET#) -- Resets internal state machine to the read mode s Tested to datasheet specifications at temperature s Quality and reliability levels equivalent to standard packaged components
2/17/98
Publication# 21551 Rev: A Amendment/+1 Issue Date: February 1998
SUPPLEMENT
GENERAL DESCRIPTION
The Am29F016B in Known Good Die (KGD) form is a 16 Mbit, 5.0 volt-only Flash memory. AMD defines KGD as standard product in die form, tested for functionality and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. A sector is typically erased and verified within one second. The device is erased when shipped from the factory. The hardware sector group protection feature disables both program and erase operations in any combination of the eight sector groups of memory. A sector group consists of four adjacent sectors. The Erase Suspend feature enables the system to put erase on hold for any period of time to read data from, or program data to, a sector that is not being erased. True background erase can thus be achieved. The device requires only a single 5.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations during power transitions. The host system can detect whether a program or erase cycle is complete by using the RY/BY# pin, the DQ7 (Data# Polling) or DQ6 (toggle) status bits. After a p r o g r a m or erase cycle has been completed, the device automatically returns to the read mode. A hardware RESET# pin terminates any operation in progress. The internal state machine is reset to the read mode. The RESET# pin may be tied to the system r es e t circuitry. Therefore, if a system reset occurs dur ing either an Embedded Program or Embedded Erase algorithm, the device is automatically reset to the read mode. This enables the system's microprocessor to read the boot-up firmware from the Flash memory. AM D 's Flash technology combines years of Flash me m o r y manufacturing experience to produce the h i g h e s t leve l s o f q u a l i t y, r e l i a b i l i t y, a n d co s t effec tiveness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a time using the EPROM programming mechanism of hot electron injection.
Am29F016B Features
T h e Am29F016B is a 16 Mbit, 5.0 volt-only Flash memor y organized as 2,097,152 bytes of 8 bits each. The 2 Mbytes of data are divided into 32 sectors of 64 Kbytes each for flexible erase capability. The 8 bits of data appear on DQ0DQ7. The Am29F016B is manufac tured using AMD's 0.35 µm process technology. This device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 v o l t V P P is n o t required for program or erase operations. The device can also be programmed in standard EPROM programmers. The standard device offers an access time of 120 ns, a l l o w i n g high-speed microprocessors to operate without wait states. To eliminate bus contention, the device has separate chip enable (CE#), write enable (WE#), and output enable (OE#) controls. The device is entirely command set compatible with the J E D EC single-power-supply Flash standard. Comm a n d s are written to the command register using s t a n d a r d microprocessor write timings. Register contents serve as input to an internal state machine t h at controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0 volt Flash or EPROM devices. The device is programmed by executing the program c o m m a n d sequence. This invokes the Embedded Program algorithm--an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The device is erased by executing t h e erase command sequence. This invokes the Embedded Erase algorithm--an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin.
ELECTRICAL SPECIFICATIONS
Refer to the Am29F016B data sheet, PID 21444, for full electr ical specifications on the Am29F016B in KGD form.
PRODUCT SELECTOR GUIDE
Family Part Number Speed Option (VCC = 5.0 V ± 10%) Max Access Time, tACC (ns) Max CE# Access, tCE (ns) Max OE# Access, tOE (ns) Am29F016B KGD -120 120 120 50
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SUPPLEMENT
DIE PHOTOGRAPH
Orientation relative to leading edge of tape and reel Orientation relative to top left corner of Gel-Pak
DIE PAD LOCATIONS
8 9 7 6 5 4 3 2 1 37 36 35 34 33 32 31 30 29
AMD logo location
10 28
11 12 13 14 15 16 17 18 19
20 21 22 23 24 25 26 27
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SUPPLEMENT
PAD DESCRIPTION
Pad 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 Signal VCC DQ4 DQ5 DQ6 DQ7 RY/BY# OE# WE# A20 A19 A18 A17 A16 A15 A14 A13 A12 CE# VCC RESET# A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 DQ3 VSS Pad Center (mils) X Y 0.00 0.00 10.60 0.00 24.00 0.00 37.20 0.00 50.50 0.00 68.90 0.00 84.20 0.00 111.80 0.00 119.30 8.50 119.30 245.30 109.10 258.20 100.20 258.20 88.20 258.20 79.00 258.20 67.00 258.20 57.80 258.20 45.80 258.20 36.60 258.20 27.20 258.20 45.00 258.20 57.20 258.20 69.20 258.20 78.40 258.20 90.60 258.20 99.80 258.20 112.00 258.20 121.10 258.20 131.20 245.30 131.20 8.50 123.80 0.00 111.90 0.00 102.40 0.00 74.40 0.00 61.20 0.00 47.90 0.00 34.70 0.00 21.70 0.00 Pad Center (millimeters) X Y 0.00 0.00 0.27 0.00 0.61 0.00 0.94 0.00 1.28 0.00 1.75 0.00 2.14 0.00 2.84 0.00 3.03 0.22 3.03 6.23 2.77 6.56 2.55 6.56 2.24 6.56 2.01 6.56 1.70 6.56 1.47 6.56 1.16 6.56 0.93 6.56 0.69 6.56 1.14 6.56 1.45 6.56 1.76 6.56 1.99 6.56 2.30 6.56 2.53 6.56 2.84 6.56 3.08 6.56 3.33 6.23 3.33 0.22 3.14 0.00 2.84 0.00 2.60 0.00 1.89 0.00 1.55 0.00 1.22 0.00 0.88 0.00 0.55 0.00
Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
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SUPPLEMENT
ORDERING INFORMATION Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: Am29F016B -120 DP C 1 DIE REVISION This number refers to the specific AMD manufacturing process and product technology reflected in this document. It is entered in the revision field of AMD standard product nomenclature. TEMPERATURE RANGE C I = = Commercial (0°C to +70°C) Industrial (40°C to +85°C)
PACKAGE TYPE AND MINIMUM ORDER QUANTITY DP = DG = DT = DW = Waffle Pack 100 die per 5 tray stack Gel-Pak® Die Tray 294 die per 6 tray stack SurftapeTM (Tape and Reel) 1600 per 7-inch reel Gel-Pak® Wafer Tray (sawn wafer on frame) Call AMD sales office for minimum order quantity
SPEED OPTION See Valid Combinations DEVICE NUMBER/DESCRIPTION Am29F016B Known Good Die 16 Megabit (2 M x 8-Bit) CMOS Flash Memory--Die Revision 1 5.0 Volt-only Read, Program, and Erase
Valid Combinations DPC 1, DPI 1, DGC 1, DGI 1, DTC 1, DTI 1, DWC 1, DWI 1
Am29F016B-120
Valid Combinations Val id Combinations list configurations planned to be suppor ted in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations.
2/17/98
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