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Part: IRKT71/06
Category:
Discrete
-> Thyristors
Description: Thyristor Module 70a
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Datasheet: Download IRKT71/06 datasheet File size : 235 kB
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Datasheet text preview:
Bulletin I27132 rev. D 09/97
IRK.71, .91 SERIES
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features
Electrically isolated: DBC base plate 3500 VRMS isolating voltage Standard JEDEC package Simplified mechanical designs, rapid assembly Auxiliary cathode terminals for wiring convenience High surge capability Wide choice of circuit configurations Large creepage distances UL E78996 approved
N E W ADD-A-pakTM Power Modules
75 A 95 A
Description
T h e s e IRK series of NEW ADD-A-paks use power d i o d e s and thyristors in a variety of circuit configur a t i o n s . The semiconductor chips are electrically i s o l a t e d from the base plate, allowing common h e a t s i n k s and compact assemblies to be built. T h e y can be interconnected to form single phase or t h r e e phase bridges or AC controllers. These m o d u l e s are intended for general purpose high v o l t a g e applications such as high voltage regulated p o w e r supplies, lighting circuits, and temperature a n d motor speed control circuits.
Major Ratings and Characteristics
Parameters
IT(AV) or IF(AV) @ 85°C IO(RMS) (*) ITSM @ 50Hz IFSM @ 60Hz It
2
IRK.71
75 165 1665 1740 13.86 12.56 138.6
IRK.91
95 210 1785 1870 15.91 14.52 159.1
Units
A A A A KA 2s KA 2s KA 2s V
o
@ 50Hz @ 60Hz
I t VRRM range TSTG TJ
(*) As AC switch.
2
400 to 1600 - 40 to 125 - 40 to125
C C
o
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IRK.71, .91 Series
Bulletin I27132 rev. D 09/97
ELECTRICAL SPECIFICATIONS Voltage Ratings
Type number Voltage Code 04 06 08 IRK.71/ .91 10 12 14 16
VRRM , maximum VRSM , maximum VDRM , max. repetitive IRRM repetitive non-repetitive peak off-state voltage, IDRM peak reverse voltage peak reverse voltage gate open circuit 125°C V V V mA
400 600 800 1000 1200 1400 1600 500 700 900 1100 1300 1500 1700 400 600 800 1000 1200 1400 1600 15
On-state Conduction
Parameters
IT(AV) IF(AV) Max. average on-state current (Thyristors) Max. average forward current (Diodes) IO(RMS) Max. continuous RMS on-state current. As AC switch ITSM or IFSM Max. peak, one cycle non-repetitive on-state or forward current 165 1665 1740 1400 1470 1850 1940 I2 t Max. I2t for fusing 13.86 12.56 9.80 8.96 17.11 15.60 I2t Max. I 2t for fusing (1) voltage (2) rt VTM VFM di/dt Max. value of on-state slope resistance (2) Max. peak on-state or forward voltage Max. non-repetitive rate of rise of turned on current IH IL
2
IRK.71
IRK.91
Units
Conditions
180o conduction, half sine wave, TC = 85o C
75
95
210 A 1785 1870 1500 1570 2000 2100 15.91 14.52 11.25 10.27 20.00 18.30 159.1 0.80 0.85 2.40 2.25 1.58 KA2s V m KA s
2
I(RMS)
t=8.3ms reapplied
or
I(RMS)
Sinusoidal half wave, Initial TJ = TJ max.
t=10ms No voltage t=10ms 100% V R R M t=8.3ms reapplied t=10ms TJ = 25 C,
o
t=8.3ms no voltage reapplied t=10ms No voltage t=8.3ms reapplied t=10ms 100% VRRM t=8.3ms reapplied t=10ms TJ = 25o C, t= 8.3ms no voltage reapplied t=0.1 to 10ms, no voltage reapplied Low level (3) High level (4) Low level(3) High level (4) ITM = x IT(AV) IFM = x IF(AV) TJ = TJ max TJ = TJ max TJ = 25°C Initial TJ = TJ max.
138.6 0.82 0.85 3.00 2.90 1.59
VT(TO) Max. value of threshold
V
T J = 25o C, from 0.67 VDRM , 150 200 mA A/µs ITM = x IT(AV), I = 500mA, g t 6 µs
r p
Max. holding current
T J = 25oC, anode supply = 6V, resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load
2
Max. latching current
2
400
(1) I t for time tx = I t x tx (4) I > x IAV
(2) Average power = VT(TO) x IT(AV) + r t x (IT(RMS))
(3) 16.7% x x IAV < I < x IAV
2
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IRK.71, .91 Series
Bulletin I27132 rev. D 09/97
Triggering
Parameters
PG M IG M Max. peak gate power
IRK.71
12 3.0 3.0 10 4.0 2.5 1.7 270 150 80
IRK.91
12 3.0 3.0
Units
W A
Conditions
PG(AV) Max. average gate power Max. peak gate current gate voltage VGT Max. gate voltage required to trigger IGT Max. gate current required to trigger Max. gate voltage that will not trigger Max. gate current that will not trigger -VG M Max. peak negative
V
T J = - 40°C T J = 25°C T J = 125°C T J = - 40°C T J = 25°C
Anode supply = 6V resistive load Anode supply = 6V
mA
VGD IG D
0.25 6
V mA
resistive load T J = 125°C o T J = 125 C, rated VDRM applied rated VDRM applied
T J = 125oC,
Blocking
Parameters
IRRM IDRM Max. peak reverse and off-state leakage current at VRRM, VDRM 2500 (1 min) VINS RMS isolation voltage 3500 (1 sec) 500 V/µs V shorted TJ = 125oC, linear to 0.67 VDRM, gate open circuit 50 Hz, circuit to base, all terminals 15 mA T J = 125 oC, gate open circuit
IRK.71
IRK.91
Units
Conditions
dv/dt Max. critical rate of rise of off-state voltage (5)
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT91/16 S90.
Thermal and Mechanical Specifications
Parameters
TJ T
stg
IRK.71
IRK.91
Units
Conditions
Junction operating temperature range Storage temp. range
- 40 to 125 °C - 40 to 125
RthJC Max. internal thermal resistance, junction to case RthCS Typical thermal resistance case to heatsink T Mounting torque ± 10% to heatsink b usbar wt Approximate weight Case style 0.1 5 Nm 3 83 (3) TO-240AA g (oz) JEDEC 0.165 0.135 K/W
Mounting surface flat, smooth and greased. Flatness < 0.03 mm; roughness < 0.02 mm A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound
Per module, DC operation
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