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Part: D45H5-H11
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Datasheet: Download D45H5-H11 datasheet File size : 167 kB
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®
D45H5 D45H8 \ D45H11
PNP SILICON POWER TRANSISTORS
s s
s
STM PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATION VOLTAGE FAST SWITCHING SPEED
APPLICATIONS GENERAL PURPOSE SWITCHING s GENERAL PURPOSE SWITCHING AND AMPLIFIER
s
3 1 2
DESCRIPTION The D45H5, D45H8 and D45H11 are silicon multiepitaxial planar PNP transistors mounted in Jedec TO-220 plastic package. They are inteded for various switching and general purpose applications. D45H8, D45H11 are complementary with D44H8, D44H11.
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ym b o l V CE O VEBO IC ICM IB P tot Tstg Tj P a r am e t e r D45H5 C o l le c t o r- E m i t te r Voltage (I B = 0) E m i t te r - B as e Voltage (I C = 0) C o l le c t o r Current C o l le c t o r Peak Current B a s e Current T o t a l Dissipation at T c 25 C
o
Va l u e D 4 5H 8 - 60 -5 -1 0 -2 0 -5 50 - 6 5 to 150 150 D45H11 -80 -45
U ni t V V A A A W
o o
S t o ra g e Temperature M a x . Operating Junction Temperature
C C
June 1998
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D45H5/D45H8/D45H11
THERMAL DATA
R t h j - c a se T h e r m al Resistance Junction-case Max 2.5
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Sy m b o l IC BO IEBO P a r a m et e r C o l le c t o r Cut-off C u r re n t (I E = 0) E m i t t er Cut-off Current ( I C = 0) T e s t Conditions V C B = rated V C E O V E B = -5V I C = -100 mA f o r D45H5 f o r D45H8 f o r D45H11 I C = -8 A I C = -8 A I C = -8 A I C = -2 A I C = -4 A I B = -0.4 A I B = -0.8 A I B = -0.8 A V C E = -1 V V C E = -1 V 60 40 120 70 Min. Typ. M a x. - 10 - 1 00 Unit µA µA
V CE O ( s u s ) C o l le c t o r- E m i t te r S u s t ai n i ng Voltage
-4 5 -6 0 -8 0 -1 -1 - 1 .5
V V V V V
V C E(s at ) V B E (s at ) h FE
C o l le c t o r- E m i t te r S a t u ra t i on Voltage B a s e -E m i t t er S a t u ra t i on Voltage D C Current Gain
Pulsed: Pulse duration = 300 µs, duty cycle 2 %
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D45H5/D45H8/D45H11
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. M AX. 4.60 1.32 2.72 M IN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. M AX. 0.181 0.051 0.107
P011C
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D45H5/D45H8/D45H11
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is gr an ted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are sub ject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products ar e not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1998 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singap ore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. .
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